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High Precision Hall-Effect Switch
Data Sheet Version 1.0 2003-11-20
TLE4946H
Features * * * * * * * * * * * * 2.7V to 24V supply voltage operation Operation from unregulated power supply High sensitivity and high stability of the magnetic switching points High resistance to mechanical stress by Active Error Compensation Reverse battery protection (-18V) Superior temperature stability Peak temperatures up to 195C without damage Low jitter (typ. 1s) High ESD performance (6kV HBM) Digital output signal Bipolar version SMD package P-SC59-3-2 (SOT-23 compatible)
Ordering Code Q62705K-697
P-SC59-3-2
Type TLE4946H
Package P-SC59-3-2
Functional Description
The TLE4906H is an integrated circuit Hall-effect sensor designed specifically for highly accurate applications. Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and chopper techniques on chip.
TLE4946H
Circuit Description
The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator, and output transistor. The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the temperature behavior and reduce technology variations. The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall probe caused by molding and soldering processes and other thermal stresses in the package. This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic switching points.
Figure 1: Block Diagram
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TLE4946H
Pin Configuration
Figure 2: Pin Configuration (SOT-23 pin compatible)
Pin Definition and Functions Pin
1 2 3
Symbol
VS Q GND
Function
Supply voltage Output Ground
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TLE4946H
Absolute Maximum Ratings
Tj = -40 to 150C
Parameter Supply Voltage Supply Current through protection device Output Voltage Continuous Output Current Junction Temperature Symbol VS IS VQ IQ Tj min. -18 -18 -18 -50 -0.7 -0.7 -50 max. 18 24 26 +50 18 26 +50 Unit V mA V for 5 min @ 1.2 kOhm pull up mA Conditions for 1h ,Rs>=200 Ohm for 5min, Rs>=200 Ohm
155 C for 2000 h (not additive) 165 for 1000 h (not additive) 175 for 168 h (not additive) 195 for 3x1 h (additive) Storage Temperature TS -40 150 C Magnetic Flux Density B unlimit. mT Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD Protection
Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method 3015.7
Parameter ESD Voltage Symbol VESD max. 6 Unit kV Conditions HBM, R= 1.500 Ohm, C= 100pF; TA = 25C
Operating Range
Parameter Supply Voltage Output Voltage Junction Temperature Output Current Symbol VS VQ Tj IQ min. 2.7 -0.7 -40 0 typ. max. 18 24 26 18 150 175 20 Unit V V C for 168 h mA Conditions 1h with RS >= 200 Ohm for 5min RS >= 200 Ohm
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TLE4946H
AC/DC Characteristics
over operating range, unless otherwise specified. Typical values correspond to VS=12V and TA=25C.
Parameter Supply Current Reverse Current Output Saturation Voltage Output Leakage Current Output Fall Time Output Rise Time Chopper Frequency Switching Frequency 2) Delay Time 3) Output Jitter Symbol IS ISR VQSAT IQLEAK tf tr fOSC fSW td tQJ min. 2 0 0 typ. 4 0.2 0.3 0.05 0.02 0.4 320 13 1 max. 6 1 0.6 10 1 1 1) 15 Unit mA mA V A s s Conditions VS = 2.7V .. 18V VS= -18V IQ= 20mA for VQ=18 V RL= 1.2 kOhm ;CL=50pF; Figure 3 RL= 1.2 kOhm ;CL=50pF; Figure 3
BREP Repeatability of magnetic 20 4) thresholds 5) Power-On Time tPON 13 6) Thermal Resistance RthJA 100 P-SC59-3-2 1) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path. 2) Systematic delay between magnetic threshold reached and output switching. 3) Jitter is the unpredictable deviation of the output switching delay. 4) BREP is equivalent to the noise constant. 5) Time from applying VS >= 2.7 V to the sensor until the output state is valid. 6) Thermal resistance from junction to ambient. e.g.: VS=12.0 V, IS_typ=4 mA, VQSAT_typ=0.3 V and IQ=20 mA => Power Dissipation Pdis=54.0 mW. In TA = Tj - (RthJA * Pdis) = 175 C - (100 K/W * 0.054 W) => TA = 169.6 C
kHz kHz s sRMS Typ. Value for Square-Wave Signal 1kHz TRMS Typ. Value for B/t>12mT/ms s VS >= 2.7V K/W
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TLE4946H
Magnetic Characteristics
over operating range, unless otherwise specified. Typical values correspond to VS=12V.
Parameter Operate Point TLE4946H Release Point TLE4946H Hysteresis TLE4946H Magnetic Offset TLE4946H Symbol BOP Tj [C] -40 25 150 -40 25 150 -40 25 150 -40 25 150 min. 11.8 11.0 6.1 -19.2 -17.0 -13.7 22.0 -3.0 typ. 15.8 14.0 9.6 -15.8 -14.0 -9.6 28.0 max. 19.2 17.0 13.7 mT -11.8 -11.0 -6.1 mT 34.0 mT 3.0 (BOP+BRP)/2 Unit mT Conditions
BRP
BHYS
BOFF
Temperature TC ppm/C Compensation of -2000 Magnetic Thresholds Positive magnetic fields related with south pole of magnet to the branded side of package. Note: Typical characteristics specify mean values expected over the production spread.
Timing Diagram
A p p lie d m a g n e tic fie ld B OP B RP
VQ 90% 10%
tf td
tr
td
Figure 3: Timing Definition
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TLE4946H
Package Dimension P-SC59-3-2
3 0.1 3 x 0.4
+0.05 -0.1
1.1 0.1 0.1
M
0.1
0.45 0.15
0.15 MAX.
2.8 -0.1
1 0.95
2 0.95 (0.55)
0.1 M
+0. 0.15 -0.01 5
0...8 MAX.
Figure 4: Package Dimension
Figure 5: Foot print (SOT-23 compatible)
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1.6 -0.3
+0.15
3
+0. 2
TLE4946H
Figure 6: Distance from Package to Die
Figure 7: Marking
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TLE4946H
TLE4946H Revision History: Version 1.0 Previous Version: Page Subjects (major changes since last revision)
2003-11-20
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Edition 2001-02-22 Published by Infineon Technologies AG St.-Martin-Strasse 53 D-81541 Munchen (c) Infineon Technologies AG 2000 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of noninfringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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